SKIIP12NAB12T4V1 by Semikron International | Transistors

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Manufacturer	Semikron International
Manufacturer's Part Number	SKIIP12NAB12T4V1
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 18 A; Package Style (Meter): SPECIAL SHAPE; No. of Terminals: 24;
Datasheet	SKIIP12NAB12T4V1 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	18 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Nominal Turn Off Time (toff):	335 ns
No. of Terminals:	24
Terminal Position:	UNSPECIFIED
Nominal Turn On Time (ton):	40 ns
Package Style (Meter):	SPECIAL SHAPE
JESD-30 Code:	R-XXSS-X24
No. of Elements:	7
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL RECOGNIZED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.1 V

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