SKIIP26AC126V1 by Semikron International | Transistors

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Manufacturer	Semikron International
Manufacturer's Part Number	SKIIP26AC126V1
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 88 A; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 6;
Datasheet	SKIIP26AC126V1 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	88 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	TIN/SILVER
Nominal Turn Off Time (toff):	520 ns
No. of Terminals:	42
Terminal Position:	UPPER
Nominal Turn On Time (ton):	110 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X42
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3/e4
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	IEC-60747-1; UL RECOGNIZED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.1 V

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