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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | 520502401F |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: BOTTOM; Maximum Drain Current (ID): 30 A; No. of Terminals: 3; |
| Datasheet | 520502401F Datasheet |
| In Stock | 4,610 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 354 mJ |
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 30 A |
| Maximum Pulsed Drain Current (IDM): | 120 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-XBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | HIGH RELIABILITY |
| Maximum Operating Temperature: | 150 Cel |
| Reference Standard: | EUROPEAN SPACE AGENCY; RH - 300K Rad(Si) |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .045 ohm |
