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Manufacturer | STMicroelectronics |
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Manufacturer's Part Number | IRF540CHIP |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; |
Datasheet | IRF540CHIP Datasheet |
In Stock | 1,658 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 28 A |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 2 |
Minimum DS Breakdown Voltage: | 100 V |
Qualification: | Not Qualified |
Terminal Position: | UPPER |
Package Style (Meter): | UNCASED CHIP |
JESD-30 Code: | S-XUUC-N2 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | FAST SWITCHING |
Maximum Drain Current (Abs) (ID): | 28 A |
Maximum Drain-Source On Resistance: | .077 ohm |