STMicroelectronics - IRFK4H250

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IRFK4H250 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number IRFK4H250
Description Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (Abs) (ID): 68 A; No. of Elements: 4; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
Datasheet IRFK4H250 Datasheet
In Stock822
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 500 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 4
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 68 A
Maximum Drain Current (Abs) (ID): 68 A
Sub-Category: FET General Purpose Power
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