STMicroelectronics - SCTL35N65G2V

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SCTL35N65G2V by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number SCTL35N65G2V
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 417 W; Maximum Drain-Source On Resistance: .067 ohm; Transistor Application: SWITCHING;
Datasheet SCTL35N65G2V Datasheet
In Stock3,351
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 40 A
Maximum Pulsed Drain Current (IDM): 160 A
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 417 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PSSO-N4
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .067 ohm
Other Names: 497-SCTL35N65G2VTR
Maximum Feedback Capacitance (Crss): 30 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 650 V
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