SCTL35N65G2V by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	SCTL35N65G2V
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 417 W; Maximum Drain-Source On Resistance: .067 ohm; Transistor Application: SWITCHING;
Datasheet	SCTL35N65G2V Datasheet
In Stock	3,351

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	30 pF
Maximum Drain Current (ID):	40 A
Maximum Pulsed Drain Current (IDM):	160 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	4
Minimum DS Breakdown Voltage:	650 V
Maximum Power Dissipation (Abs):	417 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PSSO-N4
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.067 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,351	-	-

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CONNECTOR ACCESSORY; IEC Conformity: NO; Alternate Contact Sources: MILITARY; MIL Conformity: YES; Contact Gender: MALE; MIL-Connector Accessory Name: CONTACT;