STMicroelectronics - SCTWA35N65G2V-4

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SCTWA35N65G2V-4 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number SCTWA35N65G2V-4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 240 W; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;
Datasheet SCTWA35N65G2V-4 Datasheet
In Stock3,108
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 30 pF
Maximum Drain Current (ID): 45 A
Maximum Pulsed Drain Current (IDM): 90 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -55 Cel
No. of Terminals: 4
Minimum DS Breakdown Voltage: 650 V
Maximum Power Dissipation (Abs): 240 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .067 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
3,108 $7.942 $24,683.736

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