SH32N65DM6AG by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	SH32N65DM6AG
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 208 W; Maximum Time At Peak Reflow Temperature (s): 30; Package Style (Meter): SMALL OUTLINE;
Datasheet	SH32N65DM6AG Datasheet
In Stock	581

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	32 A
Maximum Pulsed Drain Current (IDM):	120 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	9
Maximum Power Dissipation (Abs):	208 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G9
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.097 ohm
Moisture Sensitivity Level (MSL):	3
Avalanche Energy Rating (EAS):	778 mJ
Other Names:	497-SH32N65DM6AGTR 497-SH32N65DM6AGCT 497-SH32N65DM6AGDKR
Maximum Feedback Capacitance (Crss):	.3 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	650 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	245

Pricing (USD)

Qty.	Unit Price	Ext. Price
581	$12.405	$7,207.305

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