STB42N65DM5 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STB42N65DM5
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .085 ohm; Maximum Drain Current (ID): 33 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	STB42N65DM5 Datasheet
In Stock	3,370

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	33 A
JEDEC-95 Code:	TO-263AB
Maximum Pulsed Drain Current (IDM):	132 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	650 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	ULTRA-LOW RESISTANCE
Maximum Drain-Source On Resistance:	.085 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,370	-	-

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