STMicroelectronics - STB4NB80FPT4

STB4NB80FPT4 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STB4NB80FPT4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Maximum Pulsed Drain Current (IDM): 16 A; Maximum Drain-Source On Resistance: 3.3 ohm;
Datasheet STB4NB80FPT4 Datasheet
In Stock2,784
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 230 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4 A
JEDEC-95 Code: TO-263AB
Maximum Pulsed Drain Current (IDM): 16 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 800 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 3.3 ohm
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