STMicroelectronics - STB7003

GRF2013 by Guerrilla Rf is a wide band medium power RF amplifier with 17.5 dB gain, operating from 50-8000 MHz. It can handle up to 22 dBm CW input power and has a max VSWR of 2. Ideal for applications requiring high-frequency amplification in temperatures ranging from -40 to 105°C.

NXP Semiconductors' BGA2815,115 is a RF & Microwave Amplifier with 3.3V power supply, 6 terminals, and 21.1mA max supply current. It comes in a plastic/epoxy package and features tin terminal finish for surface mount applications.

Wolfspeed's CMPA0060002F is a wide band high power RF module with 13.5 dB gain, operating from 20 MHz to 6 GHz. It has a VSWR of 5 and operates b/w -40°C to 150°C. Ideal for RF & microwave applications requiring high power amplification in a compact form factor.

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

TQP3M9019 by Qorvo is a wide band medium power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 50 MHz to 4000 MHz and can handle a max input power of 23 dBm. This component, with its surface mount package, is commonly used in RF and microwave applications.

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

Mitsubishi Electric's M67799HA is a hybrid module with 450-470 MHz frequency range, 50 ohm impedance, and 14.77 dBm CW input power. Ideal for narrowband high-power RF applications, it operates b/w -30 to 100°C with VSWR of up to 20 in plastic/epoxy package.

The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Characteristic Impedance: 50 ohm;

Broadcom's MGA-30689-BLKG is a GAAS RF amplifier with 13.7 dB gain, operating from 40 MHz to 3000 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband medium-power applications in RF and microwave systems.

Qorvo's SPF5043Z is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mounting with a characteristic impedance of 50 ohms.

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 2; Gain: 15.5 dB; Construction: COMPONENT;

Analog Devices' HMC797LP5E is a wide band medium power RF amplifier with 11 dB gain and 23 dBm CW input power. Operating from -55 to 85°C, it covers frequencies from 0 to 22 GHz. With a VSWR of 7, this GaAs component is ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.

Qorvo's QPA2611TR7 is a GAN technology RF amplifier with 35.5 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals, surface-mountable on plastic/epoxy package body.

Broadcom's MSA-1105-TR1 is a RF amplifier with 10dB gain, operating from 50MHz to 1300MHz. It has a max input power of 13dBm and VSWR of 1.7, suitable for wideband low-power applications. This component features a plastic/epoxy package body, surface mounting feature, and operates at 5.5V with a max supply current of 70mA.

Analog Devices' HMC287MS8ETR is a GaAs RF amplifier with 3V supply, 15mA max current, and -40 to 85°C operating range. Ideal for narrowband low-power applications, it features a surface-mount package suitable for RF and microwave circuits.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; JESD-609 Code: e3;

AMMP-6220-BLK by Broadcom is a wide band low power RF amplifier with a gain of 22 dB. It operates at frequencies ranging from 6 GHz to 20 GHz and has a max input power of 15 dBm. This surface mount component is commonly used in RF and microwave applications.