STMicroelectronics - STE40NA60

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STE40NA60 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STE40NA60
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
Datasheet STE40NA60 Datasheet
In Stock2,870
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 40 A
Maximum Pulsed Drain Current (IDM): 160 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 4
Maximum Power Dissipation (Abs): 460 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .135 ohm
Avalanche Energy Rating (EAS): 3000 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Reference Standard: UL RECOGNIZED
Maximum Drain Current (Abs) (ID): 40 A
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Pricing (USD)

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