STMicroelectronics - STGB20NB37LZ

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STGB20NB37LZ by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGB20NB37LZ
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-263AB;
Datasheet STGB20NB37LZ Datasheet
In Stock3,388
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 40 A
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 2 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
Nominal Turn Off Time (toff): 15000 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 150 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 2900 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Additional Features: ESD PROTECTED
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