STMicroelectronics - STGB35N35LZT4TRL

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STGB35N35LZT4TRL by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGB35N35LZT4TRL
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Package Body Material: PLASTIC/EPOXY; Additional Features: VOLTAGE CLAMPING;
Datasheet STGB35N35LZT4TRL Datasheet
In Stock1,564
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 40 A
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Nominal Turn Off Time (toff): 37000 ns
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 380 V
Terminal Position: DUAL
Nominal Turn On Time (ton): 7600 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: VOLTAGE CLAMPING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
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