STMicroelectronics - STGW20V60F

  1. Home
  2. STMicroelectronics - STGW20V60F
STGW20V60F by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STGW20V60F
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 600 V; Package Shape: RECTANGULAR;
Datasheet STGW20V60F Datasheet
In Stock287
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 40 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Nominal Turn Off Time (toff): 173 ns
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 49 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
287 $2.040 $585.480

Popular Products

Category Top Products

FGH60N60SMD by Fairchild Semiconductor

FGH60N60SMD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 120 A; Case Connection: COLLECTOR;
IXYF40N450 by Littelfuse

IXYF40N450

Littelfuse

Littelfuse IXYF40N450 is an N-CHANNEL IGBT with 4500V VCEsat, 60A IC, and 290W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 1128ns and high operating temperature range from -55°C to 150°C. Package style is IN-LINE with PLASTIC/EPOXY body material.
FS820R08A6P2BBPSA1 by Infineon Technologies

FS820R08A6P2BBPSA1

Infineon Technologies

Infineon's FS820R08A6P2BBPSA1 is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED, CENTER TAP configuration. It has 6 elements, 820 A IC, and 714 W power dissipation for POWER CONTROL applications. With VCEsat of 1.35V and toff of 1110ns, it operates b/w -40 to 150 °C effectively.
IXYP20N65C3D1M by Littelfuse

IXYP20N65C3D1M

Littelfuse

IXYP20N65C3D1M by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 18A IC, and 2.5V VCEsat. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C temperature range.
IKB15N65EH5ATMA1 by Infineon Technologies

IKB15N65EH5ATMA1

Infineon Technologies

Infineon's IKB15N65EH5ATMA1 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 30A, and toff of 180ns. Ideal for power control applications due to its high operating temperature of 175°C and built-in diode configuration. Suitable for surface mount designs with a small outline package style.
VS-GT100DA120UF by Vishay Intertechnology

VS-GT100DA120UF

Vishay Intertechnology

VS-GT100DA120UF by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 187A max collector current. Ideal for power control applications, it features a single configuration with built-in diode, 490ns turn off time, and 208ns turn on time. UL approved and designed in a rectangular package style for flange mount.
STGP6NC60HD by STMicroelectronics

STGP6NC60HD

STMicroelectronics

STGP6NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 222ns. Package style is flange mount with through-hole terminals.
SGP10N60RUFDTU by Fairchild Semiconductor

SGP10N60RUFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 16 A; Additional Features: LOW CONDUCTION LOSS, HIGH SPEED SWITCHING;
FF200R12KS4HOSA1 by Infineon Technologies

FF200R12KS4HOSA1

Infineon Technologies

FF200R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 275A, and turn off time of 590ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
FS400R07A1E3 by Infineon Technologies

FS400R07A1E3

Infineon Technologies

FS400R07A1E3 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max collector current (IC) of 500A. It is used for power control applications and has a package style of FLANGE MOUNT.
IRGP20B60PDPBF by Infineon Technologies

IRGP20B60PDPBF

Infineon Technologies

IRGP20B60PDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 40A. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 138ns and Max Power Dissipation of 220W.
IRG4PC50UDPBF by Infineon Technologies

IRG4PC50UDPBF

Infineon Technologies

IRG4PC50UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2V and a max IC of 55A. It is designed for POWER CONTROL applications, featuring a package style of FLANGE MOUNT and operating temperatures ranging from -55 to 150 °C.
IRGR2B60KDPBF by Infineon Technologies

IRGR2B60KDPBF

Infineon Technologies

Infineon's IRGR2B60KDPBF is an N-CHANNEL IGBT with 600V VCE, 6.3A IC, and 35W power dissipation. Ideal for surface mount applications, it offers fast tr of 25ns and tf of 75ns. This device operates up to 150°C making it suitable for various power electronics systems.
IXXH75N60C3 by Littelfuse

IXXH75N60C3

Littelfuse

IXXH75N60C3 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 600V. It is commonly used for power control applications due to its high power dissipation of 750W and fast nominal turn-off time of 185ns.
HGTG30N60C3D by Onsemi

HGTG30N60C3D

Onsemi

HGTG30N60C3D by Onsemi is an N-CHANNEL IGBT with 600V VCE, 63A IC, and 550ns toff. Ideal for MOTOR CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
IXGT6N170AHV by Littelfuse

IXGT6N170AHV

Littelfuse

IXGT6N170AHV by Littelfuse is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 7V, it has a collector-emitter voltage of 1700V and can handle a collector current of 6A. This surface-mount transistor operates b/w -55 to 150°C, making it suitable for various power control systems.
NGTB40N120FL2WG by Onsemi

NGTB40N120FL2WG

Onsemi

NGTB40N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 535W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
IXXN110N65C4H1 by IXYS Corporation

IXXN110N65C4H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 210 A; Maximum VCEsat: 2.35 V;
IRG4BC40UPBF by International Rectifier

IRG4BC40UPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; No. of Elements: 1;
IXGN200N170 by IXYS Corporation

IXGN200N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 280 A; No. of Terminals: 4;