STMicroelectronics - STGW80H65FB

STGW80H65FB by STMicroelectronics

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STGW80H65FB
Description	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet	STGW80H65FB Datasheet
In Stock	4,644

STGW80H65FB Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	120 A
Maximum Power Dissipation (Abs):	469 W
Maximum Collector-Emitter Voltage:	650 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage:	7 V
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Peak Reflow Temperature (C):	NOT SPECIFIED
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,644	-	-

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