STMicroelectronics - STGWT40H65DFB

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STGWT40H65DFB by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGWT40H65DFB
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 283 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 175 Cel;
Datasheet STGWT40H65DFB Datasheet
In Stock3,938
NAME DESCRIPTION
Other Names: -497-14229-5
497-14229-5
Maximum Collector Current (IC): 80 A
Maximum Power Dissipation (Abs): 283 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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Pricing (USD)

Qty. Unit Price Ext. Price
3,938 $1.809 $7,123.842

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