STH245N75F3-6 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STH245N75F3-6
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 75 V; Case Connection: DRAIN;
Datasheet	STH245N75F3-6 Datasheet
In Stock	2,686

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	600 mJ
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	180 A
Maximum Pulsed Drain Current (IDM):	720 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	6
Minimum DS Breakdown Voltage:	75 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Case Connection:	DRAIN
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.003 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,686	-	-

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