STMicroelectronics - STH80N10F7-2

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STH80N10F7-2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STH80N10F7-2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Maximum Pulsed Drain Current (IDM): 320 A; Maximum Operating Temperature: 175 Cel;
Datasheet STH80N10F7-2 Datasheet
In Stock3,418
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 110 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0095 ohm
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Additional Features: ULTRA LOW-ON RESISTANCE
Maximum Drain Current (Abs) (ID): 80 A
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Pricing (USD)

Qty. Unit Price Ext. Price
3,418 $7.776 $26,578.368

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