STMicroelectronics - STL32N55M5

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STL32N55M5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL32N55M5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
Datasheet STL32N55M5 Datasheet
In Stock2,982
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 500 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 26 A
Maximum Pulsed Drain Current (IDM): 104 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 550 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .115 ohm
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