STMicroelectronics - STL8DN6LF6AG

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STL8DN6LF6AG by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL8DN6LF6AG
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Avalanche Energy Rating (EAS): 120 mJ; Maximum Operating Temperature: 175 Cel;
Datasheet STL8DN6LF6AG Datasheet
In Stock10,568
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 32 A
Maximum Pulsed Drain Current (IDM): 128 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 55 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .031 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 120 mJ
Other Names: 497-16504-2
497-16504-1
497-16504-6
Maximum Feedback Capacitance (Crss): 60 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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