STMicroelectronics - STP160N75F3

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STP160N75F3 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STP160N75F3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; No. of Elements: 1; Transistor Application: SWITCHING;
Datasheet STP160N75F3 Datasheet
In Stock3,770
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 120 A
Maximum Pulsed Drain Current (IDM): 480 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 330 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .0045 ohm
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 75 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 120 A
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Pricing (USD)

Qty. Unit Price Ext. Price
3,770 $4.370 $16,474.900

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