STMicroelectronics - STP45NE06LFP

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STP45NE06LFP by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STP45NE06LFP
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; No. of Elements: 1; Maximum Operating Temperature: 175 Cel;
Datasheet STP45NE06LFP Datasheet
In Stock2,463
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 25 A
Maximum Pulsed Drain Current (IDM): 180 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 35 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .03 ohm
Avalanche Energy Rating (EAS): 150 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: LOW THRESHOLD
Maximum Drain Current (Abs) (ID): 25 A
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