STMicroelectronics - STQ3N45K3-AP

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STQ3N45K3-AP by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STQ3N45K3-AP
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .6 A;
Datasheet STQ3N45K3-AP Datasheet
In Stock1,653
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .6 A
Maximum Pulsed Drain Current (IDM): 2.4 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 3.8 ohm
JEDEC-95 Code: TO-92
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 450 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .6 A
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