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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | STRH100N6HYT |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Package Body Material: METAL; Maximum Drain-Source On Resistance: .024 ohm; |
| Datasheet | STRH100N6HYT Datasheet |
| In Stock | 1,189 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | METAL |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 300 ns |
| Maximum Drain Current (ID): | 40 A |
| Maximum Pulsed Drain Current (IDM): | 320 A |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 176 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| Maximum Turn Off Time (toff): | 280 ns |
| JESD-30 Code: | S-MSFM-P3 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | PIN/PEG |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .024 ohm |
| Avalanche Energy Rating (EAS): | 954 mJ |
| Maximum Feedback Capacitance (Crss): | 470 pF |
| JEDEC-95 Code: | TO-254AA |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Additional Features: | FAST SWITCHING |
| Reference Standard: | EUROPEAN SPACE AGENCY; RH - 50K Rad(Si) |
| Maximum Drain Current (Abs) (ID): | 40 A |
