STMicroelectronics - STS9DNH3LL

  1. Home
  2. STMicroelectronics - STS9DNH3LL
STS9DNH3LL by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STS9DNH3LL
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Additional Features: FAST SWITCHING; Maximum Pulsed Drain Current (IDM): 36 A;
Datasheet STS9DNH3LL Datasheet
In Stock4,414
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9 A
Maximum Pulsed Drain Current (IDM): 36 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .017 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: FAST SWITCHING
Maximum Drain Current (Abs) (ID): 9 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,414 - -

Popular Products

Category Top Products

IRF840PBF by International Rectifier

IRF840PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE;
BSC220N20NSFDATMA1 by Infineon Technologies

BSC220N20NSFDATMA1

Infineon Technologies

BSC220N20NSFDATMA1 by Infineon is a N-CHANNEL FET for SWITCHING applications. It features a 200V DS Breakdown Voltage, 208A Pulsed Drain Current, and 0.022 ohm On Resistance. With a max power dissipation of 214W, this MOSFET operates in an Enhancement Mode with an operating temperature range from -55 to 175°C.
BS170 by Telcom Semiconductor

BS170

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Maximum Drain Current (ID): .5 A;
IRFP250NPBF by International Rectifier

IRFP250NPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Drain Current (ID): 30 A; No. of Terminals: 3;
JANTX2N6796 by Vishay Siliconix

JANTX2N6796

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Package Shape: ROUND; Transistor Application: SWITCHING;
IRF7404TRPBF by International Rectifier

IRF7404TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Feedback Capacitance (Crss): 340 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF7413ZTRPBF by International Rectifier

IRF7413ZTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN;
FDMC86102LZ by Onsemi

FDMC86102LZ

Onsemi

FDMC86102LZ by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 30A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.024 ohm RDS(on), and 41W Pdiss. Suitable for surface mount designs in various electronic systems requiring high power efficiency and reliability.
SQJ409EP-T1_GE3 by Vishay Intertechnology

SQJ409EP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ409EP-T1_GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 150A IDM, and 0.007 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
FQB47P06TM-AM002 by Onsemi

FQB47P06TM-AM002

Onsemi

FQB47P06TM-AM002 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 188A IDM, and 0.026 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Features include 820mJ EAS, 160W Pdiss, and -55 to +175°C Temp Range.
BSP170PH6327XTSA1 by Infineon Technologies

BSP170PH6327XTSA1

Infineon Technologies

Infineon's BSP170PH6327XTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 7.6A IDM, and 0.3 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and 150°C max operating temp.
IRF9530 by International Rectifier

IRF9530

International Rectifier

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Maximum Drain Current (ID): 12 A;
IRF9530 by Fairchild Semiconductor

IRF9530

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
ZXMP10A18KTC by Zetex Plc

ZXMP10A18KTC

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .15 ohm;
IRF540NSTRLPBF by International Rectifier

IRF540NSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Avalanche Energy Rating (EAS): 185 mJ; JESD-609 Code: e3;
BSP129H6327XTSA1 by Infineon Technologies

BSP129H6327XTSA1

Infineon Technologies

Infineon's BSP129H6327XTSA1 is a N-CHANNEL FET with 240V DS Breakdown Voltage and 1.4A IDM. Ideal for DEPLETION MODE operation, it features a built-in diode and 20 ohm Drain-Source On Resistance. Widely used in automotive applications due to AEC-Q101 compliance.
FQB22P10TM by Onsemi

FQB22P10TM

Onsemi

FQB22P10TM by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, 88A IDM, and 0.125 ohm RDS. Ideal for SWITCHING applications, it features a built-in DIODE in a RECTANGULAR package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has an EAS of 710 mJ and can handle up to 125W power dissipation at 175°C.
STN1NK80Z by STMicroelectronics

STN1NK80Z

STMicroelectronics

STN1NK80Z by STMicroelectronics is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It features 5A IDM, 16 ohm RDS(on), and 50mJ EAS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
SI7252DP-T1-GE3 by Vishay Intertechnology

SI7252DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7252DP-T1-GE3 is a N-channel Power FET with 100V DS breakdown voltage, ideal for switching applications. Featuring separate elements with built-in diode, it has 80A max pulsed drain current and 0.017 ohm max drain-source resistance. Its small outline package and matte tin finish make it suitable for surface mount designs.
IRF530PBF by Vishay Siliconix

IRF530PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 100 V; JEDEC-95 Code: TO-220AB;