STV160NF02LAT4 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STV160NF02LAT4
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
Datasheet	STV160NF02LAT4 Datasheet
In Stock	4,867

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	330 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	160 A
Maximum Pulsed Drain Current (IDM):	640 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	10
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G10
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0037 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,867	-	-

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RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;

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RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;