STMicroelectronics - STW26NM60FD

  1. Home
  2. STMicroelectronics - STW26NM60FD
STW26NM60FD by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STW26NM60FD
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 313 W; Maximum Drain Current (Abs) (ID): 30 A; Maximum Drain Current (ID): 30 A;
Datasheet STW26NM60FD Datasheet
In Stock2,191
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 30 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 313 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 30 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,191 - -

Popular Products

Category Top Products

IRF3205STRLPBF by International Rectifier

IRF3205STRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Minimum DS Breakdown Voltage: 55 V; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE;
IRF640 by First Components International

IRF640

First Components International

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (Abs) (ID): 18 A; Operating Mode: ENHANCEMENT MODE;
IRLML6401TRPBF by International Rectifier

IRLML6401TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;
STD25NF10LT4 by STMicroelectronics

STD25NF10LT4

STMicroelectronics

STD25NF10LT4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 25A Drain Current, 450mJ Avalanche Energy Rating, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and high power dissipation of 100W, it offers efficient performance in various electronic designs.
IRFP460 by Vishay Intertechnology

IRFP460

Vishay Intertechnology

Vishay Intertechnology's IRFP460 is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 960mJ EAS, and 0.27 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 280W at up to 150°C.
FQD1N80TM by Fairchild Semiconductor

FQD1N80TM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 1 A;
SUD50P08-25L-E3 by Vishay Intertechnology

SUD50P08-25L-E3

Vishay Intertechnology

Vishay Intertechnology's SUD50P08-25L-E3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 40A IDM, and 0.0252 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 175°C.
FDB2710 by Onsemi

FDB2710

Onsemi

FDB2710 by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage, 50A Drain Current, and 0.0425 ohm On Resistance. Ideal for power management applications due to its 260W Power Dissipation, ENHANCEMENT MODE operation, and built-in DIODE configuration.
SCT3080KLGC11 by ROHM

SCT3080KLGC11

ROHM

ROHM's SCT3080KLGC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 77A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.104 ohm max drain-source resistance.
IRFZ44NS by Transys Electronics

IRFZ44NS

Transys Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 55 V; Terminal Form: GULL WING; No. of Terminals: 2;
FDD4141-F085 by Onsemi

FDD4141-F085

Onsemi

FDD4141-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0123 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures from -55 to 150 °C.
BSC100N06LS3GATMA1 by Infineon Technologies

BSC100N06LS3GATMA1

Infineon Technologies

Infineon's BSC100N06LS3GATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features a 0.01 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE up to 150°C.
FDS4559 by Onsemi

FDS4559

Onsemi

FDS4559 by Onsemi is a Power FET with N-Channel and P-Channel types, ideal for switching applications. It features a 60V min DS breakdown voltage, 20A max pulsed drain current, and 0.055 ohm max drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 175°C.
BSP613PH6327XTSA1 by Infineon Technologies

BSP613PH6327XTSA1

Infineon Technologies

BSP613PH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 11.6A and 0.13 ohm Drain-Source On Resistance, suitable for ENHANCEMENT MODE operation in automotive systems (AEC-Q101).
IRF7240TRPBF by Infineon Technologies

IRF7240TRPBF

Infineon Technologies

IRF7240TRPBF by Infineon is a P-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage, 10.5A max drain current, and 0.015 ohm max on resistance. With a small outline package style and operating temperature range of -55 to 150 °C, it's ideal for power management in various electronic devices.
FQB12P20TM by Fairchild Semiconductor

FQB12P20TM

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Package Shape: RECTANGULAR; JESD-609 Code: e3;
CSD19536KTTT by Texas Instruments

CSD19536KTTT

Texas Instruments

CSD19536KTTT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Pulsed Drain Current of 400A, Min DS Breakdown Voltage of 100V, and Max Operating Temperature of 175°C. With a low on-resistance of 0.0028 ohm, this MOSFET is ideal for high-power switching circuits.
G3R350MT12D by Genesic Semiconductor

G3R350MT12D

Genesic Semiconductor

G3R350MT12D by Genesic Semiconductor is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for SWITCHING applications. It features a max IDM of 16A and EAS of 43mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and DRAIN case connection, it offers 0.455 ohm RDS(on) and can handle up to 63W power dissipation.
CSD18563Q5A-P by Texas Instruments

CSD18563Q5A-P

Texas Instruments

CSD18563Q5A-P by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 251A IDM, and 0.0108 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching tasks in various electronic devices.
FQP27P06 by Onsemi

FQP27P06

Onsemi

FQP27P06 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 108A IDM, 560mJ EAS, and 0.07 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 120W at 175°C.