STMicroelectronics - STW65N023M9-4

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STW65N023M9-4 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STW65N023M9-4
Description Power Field-Effect Transistors;
Datasheet STW65N023M9-4 Datasheet
In Stock2,079
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Pricing (USD)

Qty. Unit Price Ext. Price
2,079 $14.390 $29,916.810

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The Onsemi FDD4141 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has low 0.0123 ohm Drain-Source Resistance and can handle up to 69W power dissipation.
AUIRFZ44NS by International Rectifier

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IRFR4104TRPBF by International Rectifier

IRFR4104TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .0055 ohm;
2N7002BKV by Nexperia

2N7002BKV

Nexperia

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BSP149H6327XTSA1 by Infineon Technologies

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FDMS86350ET80 by Onsemi

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Onsemi

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CSD18504Q5AT by Texas Instruments

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Texas Instruments

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FDML7610S by Fairchild Semiconductor

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N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDD6637 by Onsemi

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FDD6637 by Onsemi is a P-CHANNEL Power FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 100A and EAS of 61mJ, with an ID of 55A and 0.0116 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power switching tasks.
IRF640 by Comset Semiconductors

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IPB017N10N5LFATMA1 by Infineon Technologies

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Infineon Technologies

Infineon's IPB017N10N5LFATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 720A IDM, and 0.0017 ohm RDS(on). Ideal for power applications requiring high current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation of 313W and wide operating temperature range (-55 to 150 °C).
NDT3055 by Fairchild Semiconductor

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Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G4;
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BSP315P by Infineon Technologies

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Infineon Technologies

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Infineon Technologies

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CSD18543Q3AT by Texas Instruments

CSD18543Q3AT

Texas Instruments

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BSC190N15NS3GATMA1 by Infineon Technologies

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Infineon Technologies

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Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
STP80NF10 by STMicroelectronics

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Vishay Intertechnology

The Vishay Intertechnology SQ2361ES-T1_GE3 is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 11A and an avalanche energy rating of 7.8mJ. This transistor is suitable for applications requiring high power and efficient switching capabilities.