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| Manufacturer | Taiwan Semiconductor |
|---|---|
| Manufacturer's Part Number | TSM2309CXRFG |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .19 ohm; |
| Datasheet | TSM2309CXRFG Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 3.1 A |
| Maximum Pulsed Drain Current (IDM): | 12.4 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 1.56 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .19 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
TSM2309CXRFGTR TSM2309CXRFGCT TSM2309CXRFGDKR TSM2309CX RFGTR-ND TSM2309CX RFGDKR TSM2309CX RFGCT TSM2309CX RFGCT-ND TSM2309CX RFGTR TSM2309CX RFGDKR-ND |
| Maximum Feedback Capacitance (Crss): | 20 pF |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Peak Reflow Temperature (C): | 260 |
