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| Manufacturer | Taiwan Semiconductor |
|---|---|
| Manufacturer's Part Number | TSM250N02DCQRFG |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Package Shape: SQUARE; Minimum DS Breakdown Voltage: 20 V; |
| Datasheet | TSM250N02DCQRFG Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 5.8 A |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N6 |
| No. of Elements: | 2 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .025 ohm |
| Moisture Sensitivity Level (MSL): | 3 |
| Other Names: |
TSM250N02DCQ RFGCT TSM250N02DCQ RFGTR TSM250N02DCQRFGCT TSM250N02DCQ RFGCT-ND TSM250N02DCQRFGDKR TSM250N02DCQRFGTR TSM250N02DCQ RFGDKR TSM250N02DCQ RFGTR-ND TSM250N02DCQ RFGDKR-ND |
| Maximum Feedback Capacitance (Crss): | 50 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 20 V |
| Peak Reflow Temperature (C): | 260 |
