3N153 by Texas Instruments | Transistors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	3N153
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 20 V;
Datasheet	3N153 Datasheet
In Stock	4,639

NAME	DESCRIPTION
Package Body Material:	METAL
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.05 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.4 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	SUBSTRATE
Maximum Drain-Source On Resistance:	300 ohm
Maximum Feedback Capacitance (Crss):	.6 pF
JEDEC-95 Code:	TO-72
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.05 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,639	-	-

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