Texas Instruments - CSD13381F4

  1. Home
  2. Texas Instruments - CSD13381F4
CSD13381F4 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number CSD13381F4
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Peak Reflow Temperature (C): 260; Terminal Form: NO LEAD;
Datasheet CSD13381F4 Datasheet
In Stock83,590
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.1 A
Maximum Pulsed Drain Current (IDM): 7 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: NICKEL GOLD
Maximum Power Dissipation (Abs): .5 W
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: R-XBGA-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Other Names: 296-38912-6
CSD13381F4-ND
-296-38912-1-ND
296-38912-1
296-38912-2
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 12 V
Maximum Drain Current (Abs) (ID): 2.1 A
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
83,590 - -

Popular Products

Category Top Products

2N7002L by Temic Semiconductors

2N7002L

Temic Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .8 A; Terminal Position: DUAL; No. of Elements: 1;
MMBF170Q-7-F by Diodes Incorporated

MMBF170Q-7-F

Diodes Incorporated

Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
LND150K1-G by Supertex

LND150K1-G

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .013 A; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI2323DS-T1-BE3 by Vishay Intertechnology

SI2323DS-T1-BE3

Vishay Intertechnology

Vishay Intertechnology's SI2323DS-T1-BE3 is a P-CHANNEL FET with 20V DS breakdown voltage and 3.7A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.039 ohm RDS(on) and 140pF Crss, suitable for surface mount designs at -55 to 150°C temperature range.
NTR4101PT1G by Onsemi

NTR4101PT1G

Onsemi

NTR4101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 1.8A Drain Current, and 0.085 ohm On Resistance. With ENHANCEMENT MODE operation, it features GULL WING terminals in a RECTANGULAR package style for surface mount assembly at temperatures ranging from -55 to 150°C.
NDS0605_NL by Fairchild Semiconductor

NDS0605_NL

Fairchild Semiconductor

Fairchild Semiconductor's NDS0605_NL is a P-CHANNEL FET with 60V DS Breakdown Voltage, 0.18A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a RECTANGULAR PLASTIC package with GULL WING terminals and operates up to 150°C.
2N7000/D26Z by National Semiconductor

2N7000/D26Z

National Semiconductor

2N7000/D26Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A ID. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 0.4W.
FDN360P by Onsemi

FDN360P

Onsemi

FDN360P by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage and 0.08 ohm max RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With 2A max drain current, this MOSFET has a small outline package style suitable for surface mount designs.
NTR4171PT1G by Onsemi

NTR4171PT1G

Onsemi

NTR4171PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 2.2A max drain current, and 0.075 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.25W at 150°C.
2N7002K by Yangzhou Yangjie Electronics

2N7002K

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: GULL WING; Transistor Element Material: SILICON;
FDN337N by Fairchild Semiconductor

FDN337N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;
2N7002K by Nexperia

2N7002K

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PDSO-G3; Terminal Finish: TIN;
LND150N3-GP003 by Microchip Technology

LND150N3-GP003

Microchip Technology

LND150N3-GP003 by Microchip Technology is a small signal N-CHANNEL FET with a min DS breakdown voltage of 500V. It is commonly used for switching applications and operates in depletion mode. With a max operating temperature of 150°C, it has a max drain current of 0.03A and a max drain-source on resistance of 1000Ω.
BSS123 by Onsemi

BSS123

Onsemi

BSS123 by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 0.36W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
FDS6679AZ by Onsemi

FDS6679AZ

Onsemi

FDS6679AZ by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 13A Drain Current, 0.0093 ohm On Resistance, and 745pF Feedback Capacitance. With ENHANCEMENT MODE operation and GULL WING terminals, it offers reliable performance in various electronic circuits.
FDV304PD87Z by Fairchild Semiconductor

FDV304PD87Z

Fairchild Semiconductor

Fairchild Semiconductor's FDV304PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A ID, and 1.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The SMALL OUTLINE package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
2N7002KW by Lite-on Semiconductor

2N7002KW

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 60 V;
BC548B by Philips Semiconductors

BC548B

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel;
2N7002K by NXP Semiconductors

2N7002K

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Minimum Operating Temperature: -65 Cel;
PMV65XPER by Nexperia

PMV65XPER

Nexperia

PMV65XPER by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2.8A ID, 0.078 ohm RDS(on), and ENHANCEMENT MODE operation. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.