Texas Instruments - CSD19538Q2T

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CSD19538Q2T by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD19538Q2T
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 6;
Datasheet CSD19538Q2T Datasheet
In Stock16,677
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.6 A
Maximum Pulsed Drain Current (IDM): 34.4 A
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .072 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 8 mJ
Maximum Feedback Capacitance (Crss): 16.4 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): 260
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