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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | CSD25303W1015 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; No. of Terminals: 6; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; |
Datasheet | CSD25303W1015 Datasheet |
In Stock | 2,942 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 3 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
No. of Terminals: | 6 |
Maximum Power Dissipation (Abs): | 1.5 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY |
JESD-30 Code: | R-PBGA-B6 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | BALL |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .092 ohm |
Maximum Feedback Capacitance (Crss): | 65 pF |
Polarity or Channel Type: | P-CHANNEL |
Minimum DS Breakdown Voltage: | 20 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 3 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |