CSD25304W1015 by Texas Instruments | Transistors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	CSD25304W1015
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): GRID ARRAY; Maximum Drain-Source On Resistance: .092 ohm; JESD-30 Code: R-XBGA-B6;
Datasheet	CSD25304W1015 Datasheet
In Stock	1,597

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3 A
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	6
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
JESD-30 Code:	R-XBGA-B6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.092 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	-296-40005-1-ND 296-40005-2 296-40005-6 CSD25304W1015-ND 296-40005-1
Maximum Feedback Capacitance (Crss):	15.6 pF
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e1
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	20 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,597	$0.301	$480.697

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