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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | DRA756BPGABCRQ1 |
| Description | MICROPROCESSOR CIRCUIT; Peak Reflow Temperature (C): 250; Screening Level: AEC-Q100; Terminal Finish: TIN SILVER COPPER; Technology: CMOS; Moisture Sensitivity Level (MSL): 3; |
| Datasheet | DRA756BPGABCRQ1 Datasheet |
| In Stock | 3,109 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: | 296-DRA756BPGABCRQ1 |
| Peripheral IC Type: | MICROPROCESSOR CIRCUIT |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Screening Level: | AEC-Q100 |
| Technology: | CMOS |
| Peak Reflow Temperature (C): | 250 |
| Terminal Finish: | TIN SILVER COPPER |
| JESD-609 Code: | e1 |
| Moisture Sensitivity Level (MSL): | 3 |









