Texas Instruments - SN75467N-10

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SN75467N-10 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number SN75467N-10
Description Power Bipolar Transistors;
Datasheet SN75467N-10 Datasheet
In Stock1,544
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Popular Products

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TIP31C by Power Innovations

TIP31C

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Case Connection: COLLECTOR; JESD-30 Code: R-PSFM-T3;
TIP36C by Nte Electronics

TIP36C

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Maximum Collector-Emitter Voltage: 100 V;
D44H11 by Motorola

D44H11

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 10 A; Maximum Power Dissipation Ambient: 50 W;
TIP35C by Bourns

TIP35C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
BD243C by Onsemi

BD243C

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MJD44H11T4 by Onsemi

MJD44H11T4

Onsemi

MJD44H11T4 by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 80V, max collector current of 8A, and min DC current gain of 40. With a package style of small outline, it operates up to 140°C and features Gull Wing terminals for surface mount assembly.
TIP41C by Forward International Electronics

TIP41C

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
2N3055 by Digitron Semiconductors

2N3055

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP125 by Semiconductors

TIP125

Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP111 by Semiconductors

TIP111

Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
TIP41C by Bourns

TIP41C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Package Shape: RECTANGULAR;
BD139 by Onsemi

BD139

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
MJE340 by Tt Electronics Plc

MJE340

Tt Electronics Plc

NPN; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Finish: TIN LEAD; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
TIP42C by Motorola

TIP42C

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MJD31CT4 by Onsemi

MJD31CT4

Onsemi

MJD31CT4 by Onsemi is a NPN BJT transistor with 15W power dissipation, 100V max collector-emitter voltage, and 3A max collector current. Ideal for amplifier applications, it has a small outline package style and operates up to 150°C. With a transition frequency of 3MHz, it is suitable for surface mount designs.
TIP50 by Nte Electronics

TIP50

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP41C by Secos

TIP41C

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP42A by Bourns

TIP42A

Bourns

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Minimum DC Current Gain (hFE): 15;
TIP112G by Onsemi

TIP112G

Onsemi

TIP112G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 50W and can handle a max collector-emitter voltage of 100V. This transistor is commonly used in amplifier applications due to its high DC current gain (hFE) of 500 and nominal transition frequency (fT) of 25MHz.
TIP122 by Crimson Semiconductor

TIP122

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 100 V;