Texas Instruments - TM124MBK36QA80

  1. Home
  2. Texas Instruments - TM124MBK36QA80
TM124MBK36QA80 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TM124MBK36QA80
Description DRAMs;
Datasheet TM124MBK36QA80 Datasheet
In Stock1,537
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,537 - -

Popular Products

Category Top Products

MT48LC2M32B2P-7IT:G by Micron Technology

MT48LC2M32B2P-7IT:G

Micron Technology

Micron Technology's MT48LC2M32B2P-7IT:G is a 2MX32 Synchronous DRAM with 67108864 bit memory density. It operates at 143 MHz clock frequency, suitable for industrial applications requiring fast data access and common I/O type. With a compact size of 22.22mm x 10.16mm, it offers high performance with low standby current consumption.
MT47H32M16NF-25EAIT:H by Micron Technology

MT47H32M16NF-25EAIT:H

Micron Technology

Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.
K4T51163QE-ZCE6 by Samsung

K4T51163QE-ZCE6

Samsung

Samsung's K4T51163QE-ZCE6 DDR2 DRAM features 32MX16 organization, 333 MHz clock frequency, and 536870912 bit memory density. Ideal for applications requiring high-speed data processing with a max operating temperature of 95°C.
M368L3223FTN-CCC by Samsung

M368L3223FTN-CCC

Samsung

Samsung's M368L3223FTN-CCC DDR DRAM MODULE features 32MX64 organization, 2147483648 bit memory density, and 200 MHz max clock frequency. Ideal for applications requiring high-speed data processing and large memory capacity in commercial temperature environments.
MT41J64M16JT-15EAAT:G by Micron Technology

MT41J64M16JT-15EAAT:G

Micron Technology

Micron Technology's MT41J64M16JT-15EAAT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in automotive electronics and industrial control systems.
NT5CC128M16JR-EKT by Nanya Technology

NT5CC128M16JR-EKT

Nanya Technology

NT5CC128M16JR-EKT by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.
MT48LC8M16A2B4-6AIT:L by Micron Technology

MT48LC8M16A2B4-6AIT:L

Micron Technology

Micron Technology's MT48LC8M16A2B4-6AIT:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 167 MHz clock frequency. It features self-refresh capability and offers a memory density of 134217728 bits. Ideal for industrial applications requiring fast access times and low standby current consumption.
W63AH2NBVABE by Winbond Electronics

W63AH2NBVABE

Winbond Electronics

Winbond Electronics' W63AH2NBVABE is a LPDDR3 DRAM with 32MX32 organization, 800 MHz clock frequency, and 1.2V nominal voltage. Ideal for applications requiring high-speed synchronous memory operations in compact devices due to its very thin profile and fine pitch grid array package style.
K4B1G0846G-BCH9 by Samsung

K4B1G0846G-BCH9

Samsung

Samsung's K4B1G0846G-BCH9 DDR3 DRAM features 128MX8 organization, 667 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max supply current of 130 mA.
S70KL1282DPBHA023 by Cypress Semiconductor

S70KL1282DPBHA023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Technology: CMOS;
IS43LD32640B-18BLI-TR by Integrated Silicon Solution

IS43LD32640B-18BLI-TR

Integrated Silicon Solution

IS43LD32640B-18BLI-TR by Integrated Silicon Solution is a 64MX32 LPDDR2 DRAM with 67108864 words and 2147483648 bit memory density. Operating at 1.2V, it features synchronous mode, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact grid array package.
MT47H64M16HR-3IT:E by Micron Technology

MT47H64M16HR-3IT:E

Micron Technology

Micron Technology's MT47H64M16HR-3IT:E is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast access times.
IS42S16800F-7TLI-TR by Integrated Silicon Solution

IS42S16800F-7TLI-TR

Integrated Silicon Solution

IS42S16800F-7TLI-TR by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating range. Ideal for industrial applications requiring high memory density and fast access times.
K4S281632K-UC75 by Samsung

K4S281632K-UC75

Samsung

Samsung's K4S281632K-UC75 is a 8MX16 DRAM with 133 MHz clock frequency, suitable for commercial applications. Features include 3.3V supply voltage, 70°C operating temperature, and 4096 refresh cycles. Ideal for systems requiring high-speed synchronous memory with low power consumption.
IS42S16400J-5TL by Integrated Silicon Solution

IS42S16400J-5TL

Integrated Silicon Solution

IS42S16400J-5TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at up to 200MHz clock frequency. It features self-refresh and common I/O for various applications requiring fast memory access and high data density in a small outline package.
IS43QR16256B-075UBLI by Integrated Silicon Solution

IS43QR16256B-075UBLI

Integrated Silicon Solution

IS43QR16256B-075UBLI by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1333.33 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT41J64M16JT-15E:G by Micron Technology

MT41J64M16JT-15E:G

Micron Technology

MT41J64M16JT-15E:G by Micron Technology is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a 1.5V supply voltage and offers 67108864 words of memory. Ideal for applications requiring high-speed synchronous operation and common I/O type, such as servers, workstations, and networking equipment.
IS42S16800F-7BLI-TR by Integrated Silicon Solution

IS42S16800F-7BLI-TR

Integrated Silicon Solution

IS42S16800F-7BLI-TR by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. Ideal for industrial applications requiring fast access time and low standby current consumption.
MT41K256M16HA-125:E by Micron Technology

MT41K256M16HA-125:E

Micron Technology

Micron Technology's MT41K256M16HA-125:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and a low supply voltage of 1.35V. Ideal for applications requiring high-speed memory access in compact electronic devices.
MT48LC32M16A2P-75IT by Micron Technology

MT48LC32M16A2P-75IT

Micron Technology

Micron Technology's MT48LC32M16A2P-75IT is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact small outline package design.