Texas Instruments - TMS428160AP70DGE

  1. Home
  2. Texas Instruments - TMS428160AP70DGE
TMS428160AP70DGE by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TMS428160AP70DGE
Description DRAMs;
Datasheet TMS428160AP70DGE Datasheet
In Stock1,277
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,277 - -

Popular Products

Category Top Products

MT53D1024M32D4DT-053AIT:D by Micron Technology

MT53D1024M32D4DT-053AIT:D

Micron Technology

LPDDR4 DRAM;
MT48LC32M16A2TG-75:CTR by Micron Technology

MT48LC32M16A2TG-75:CTR

Micron Technology

Micron Technology's MT48LC32M16A2TG-75:CTR is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at 0-70°C. It features 33554432 words, 16-bit memory width, and 536870912 bit memory density. Ideal for applications requiring fast access time and synchronous operation.
H5TQ4G63MFR-H9C by Sk Hynix

H5TQ4G63MFR-H9C

Sk Hynix

Sk Hynix's H5TQ4G63MFR-H9C is a 256MX16 DDR3 DRAM with 667 MHz clock frequency. It features 256M words, operates at 1.5V, and has a thin profile grid array package. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41J256M16HA-125:E by Micron Technology

MT41J256M16HA-125:E

Micron Technology

Micron Technology's MT41J256M16HA-125:E is a DDR3 DRAM with 256MX16 organization, operating at 800 MHz. It features a thin profile grid array package and synchronous operation mode. Ideal for applications requiring high-speed memory access in devices like servers and networking equipment.
MT47H64M16NF-25E:M by Micron Technology

MT47H64M16NF-25E:M

Micron Technology

Micron Technology's MT47H64M16NF-25E:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features a 1.8V nominal voltage and offers 67108864 words of memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A1G8SA-062E:ETR by Micron Technology

MT40A1G8SA-062E:ETR

Micron Technology

Micron Technology's MT40A1G8SA-062E:ETR is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in temperatures ranging from 0 to 95°C.
AS4C512M16D3LA-10BIN by Alliance Memory

AS4C512M16D3LA-10BIN

Alliance Memory

Alliance Memory's AS4C512M16D3LA-10BIN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from -40 to 95 °C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density in a compact grid array package.
MT40A256M16HA-093E:A by Micron Technology

MT40A256M16HA-093E:A

Micron Technology

Micron Technology's MT40A256M16HA-093E:A is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. This thin-profile memory module has a package style of grid array with fine pitch terminals, suitable for various applications requiring high-speed data processing in compact devices.
IS42S16160G-7BLI-TR by Integrated Silicon Solution

IS42S16160G-7BLI-TR

Integrated Silicon Solution

IS42S16160G-7BLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for industrial applications, it features a thin profile grid array package and supports common I/O type with self-refresh capability.
MT41K256M16HA-125AIT:E by Micron Technology

MT41K256M16HA-125AIT:E

Micron Technology

Micron Technology's MT41K256M16HA-125AIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-performance applications in automotive electronics.
MT46H64M32LFMA-5IT:A by Micron Technology

MT46H64M32LFMA-5IT:A

Micron Technology

MT46H64M32LFMA-5IT:A by Micron Technology is a 64MX32 LPDDR1 DRAM with 67108864 words, 2147483648 bit memory density, and 32-bit memory width. Operating in industrial temperature range of -40 to 85 °C, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.
IS42S32400F-7BLI-TR by Integrated Silicon Solution

IS42S32400F-7BLI-TR

Integrated Silicon Solution

IS42S32400F-7BLI-TR by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. Featuring a max clock frequency of 143 MHz, it suits industrial applications requiring high memory density and fast access times.
M378B5673FH0-CH9 by Samsung

M378B5673FH0-CH9

Samsung

Samsung M378B5673FH0-CH9 DDR DRAM MODULE features 256MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT48LC4M32B2TG-7IT:GTR by Micron Technology

MT48LC4M32B2TG-7IT:GTR

Micron Technology

Micron Technology's MT48LC4M32B2TG-7IT:GTR is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access time and high memory density in a compact small outline package.
MT61K512M32KPA-16:BTR by Micron Technology

MT61K512M32KPA-16:BTR

Micron Technology

Micron Technology's MT61K512M32KPA-16:BTR is a GDDR6 DRAM with 512MX32 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
MT46H32M16LFBF-6AT:C by Micron Technology

MT46H32M16LFBF-6AT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6AT:C is a DDR1 DRAM with 32MX16 organization, 33554432 words, and 536870912 bit memory density. Operating at 105 °C max temp, it suits industrial applications requiring fast access times of 5 ns. With synchronous operation and self-refresh capability, this DRAM offers reliable performance in various electronic systems.
NT5CC256M16ER-EK by Nanya Technology

NT5CC256M16ER-EK

Nanya Technology

NT5CC256M16ER-EK by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and low power consumption in compact electronic devices.
S27KL0642DPBHB020 by Cypress Semiconductor

S27KL0642DPBHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm; Terminal Pitch: 1 mm;
MT48H32M16LFB4-6IT:C by Micron Technology

MT48H32M16LFB4-6IT:C

Micron Technology

Micron Technology's MT48H32M16LFB4-6IT:C is a DDR DRAM with 32MX16 organization, operating at 166 MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.
MT48LC4M32B2P-6AAAT:L by Micron Technology

MT48LC4M32B2P-6AAAT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AAAT:L is a 4MX32 Synchronous DRAM with 32-bit memory width. Operating at 3.3V, it offers a max access time of 5.4ns and self-refresh capability. Ideal for industrial applications requiring high-speed data processing in a compact form factor.