Texas Instruments - TMS45160S-70DGE

Samsung's K4B4G0846B-HCK0 DDR3 DRAM features 512MX8 organization, 1.5V nominal voltage, and 4294967296 bit memory density. Ideal for applications requiring high-speed synchronous operation with self-refresh capability in a compact GRID ARRAY package.

Micron Technology's MT48LC4M16A2P-6AIT:J is a 4MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density.

Samsung's KM48V2104BK-6 is a 2MX8 EDO DRAM with 3.3V supply, operating in FAST PAGE mode with 60ns access time. It features 28 terminals in a small outline package suitable for commercial temperature applications. With a memory density of 16Mbit and 2048 refresh cycles, it offers high-speed data storage solutions.

IS43QR16256B-075UBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1333.33 MHz clock frequency, suitable for applications requiring high-speed memory access. It operates synchronously at 1.2V and features dual bank page burst access mode, making it ideal for systems demanding efficient data processing. The package style is grid array with thin profile and fine pitch, facilitating compact design integration.

Micron Technology's MT40A2G8NRE-083E:B is a DDR4 DRAM with 2GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. This thin profile memory module is ideal for applications requiring high-speed data processing in compact electronic devices.

Micron Technology's MT46V16M16P-5BIT:K is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

Micron Technology's MT47H128M16RT-25E:CTR is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Suitable for applications requiring high memory density and fast access times in a compact package.

Samsung's K4B1G1646G-BCMA DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max standby current of 0.01 Amp.

Micron Technology's MT61K256M32JE-21:T is a GDDR6 DRAM with 256MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in devices like graphics cards or gaming consoles.

Micron Technology's MT53D512M32D2DS-053AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a max clock frequency of 1869.1 MHz and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics and industrial devices.

Samsung's KM44C256BZ-8 is a 256Kx4 DRAM with 80ns access time, operating at 5V. It features a common I/O type, 3-state output characteristics, and fast page access mode. Ideal for commercial applications requiring high-speed memory with a memory density of 1048576 bits.

IS42S16320D-7BLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with a max clock frequency of 143 MHz. It is commonly used in industrial applications and operates at a temperature range of -40 to 85 °C.

Micron Technology's MT41K64M16TW-107AIT:J is a DDR3L DRAM with 64MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Functions: 1; Package Equivalence Code: BGA24,5X5,40;

Micron Technology's MT48LC8M16A2P-7EIT:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 143 MHz clock frequency. It features common I/O type, self-refresh mode, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density.

Alliance Memory's AS4C512M8D4-83BCN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in compact devices.

IS42S16320D-7TLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation and self-refresh capability. It operates at 3.3V, has a clock frequency of 143MHz, and is ideal for industrial applications requiring high-speed memory access.

Micron Technology's MT40A256M16HA-093E:A is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. This thin-profile memory module has a package style of grid array with fine pitch terminals, suitable for various applications requiring high-speed data processing in compact devices.

Samsung's KMM591000B-8 is a 1MX9 DRAM module with 1048576 words, 9437184 bit memory density, and 80 ns max access time. It operates in fast page access mode at a nominal voltage of 5V. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.

Micron Technology's MT41K128M16JT-125AAT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package, operates at 1.35V, and has an industrial temperature grade. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.