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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | TPIC5322LD |
Description | N-CHANNEL; Configuration: SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Pulsed Drain Current (IDM): 3 A; Qualification: Not Qualified; |
Datasheet | TPIC5322LD Datasheet |
In Stock | 2,174 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 52 ns |
Maximum Drain Current (ID): | 1 A |
Maximum Pulsed Drain Current (IDM): | 3 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
No. of Terminals: | 16 |
Maximum Power Dissipation (Abs): | 1.1 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 66 ns |
JESD-30 Code: | R-PDSO-G16 |
No. of Elements: | 3 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Power Dissipation Ambient: | 1.09 W |
Maximum Drain-Source On Resistance: | .525 ohm |
Avalanche Energy Rating (EAS): | 40.5 mJ |
Maximum Feedback Capacitance (Crss): | 40 pF |
JEDEC-95 Code: | MS-012AC |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Additional Features: | LOGIC LEVEL COMPATIBLE |
Maximum Drain Current (Abs) (ID): | 1 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |