Toshiba - 1SV311(TPH3,F,T)

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: Tin (Sn); Nominal Diode Capacitance: 52 pF;

The Onsemi SVD201 is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. Featuring a nominal capacitance of 1.9 pF, it has a min breakdown voltage of 27 V and operates at temperatures up to 150 °C. This surface-mount diode in microwave package style is made of gallium arsenide and offers a max power dissipation of 0.2 W.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .9 pF; Maximum Repetitive Peak Reverse Voltage: 20 V; Minimum Quality Factor: 66;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 29 pF; Minimum Quality Factor: 200; Maximum Repetitive Peak Reverse Voltage: 30 V;

MMVL109T1 by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. Ideal for very high frequency applications, this single-configured diode in a small outline package is surface mountable and has a max power dissipation of 0.2 W.

The Onsemi 1N5442 Varactor Diode has a Min Quality Factor of 450, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 8.2 pF. It is used in applications requiring variable capacitance diodes for tuning circuits with a voltage range up to 30 V.

Infineon's BB844E6327HTSA1 is a varactor diode with common cathode, 2 elements, and very high frequency band. It has a capacitance of 43.75 pF, breakdown voltage of 18 V, and operates b/w -55 to 150°C. Ideal for applications requiring variable capacitance in small outline packages like RF tuning circuits.

MMBV109LT1G by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is ideal for very high frequency applications due to its hyperabrupt variable capacitance diode classification and small outline package style.

1N4805 by Onsemi is a varactor diode with 15 pF nominal capacitance, 110 V breakdown voltage, and 0.000000005 uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.

The Onsemi SVC371 is a Varactor Diode with 500 pF capacitance, 16 V breakdown voltage, and 200 min quality factor. It is used in RF applications for frequency tuning due to its variable capacitance diode type and high-quality factor. The diode's small outline package with gull wing terminals makes it suitable for surface mount designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BB204G-AMMOPAK by NXP Semiconductors is a variable capacitance diode featuring a 2.5 min capacitance ratio and a cylindrical plastic/epoxy package. With 3 terminals in a common cathode config, it’s ideal for RF tuning applications. Its silicon elements ensure reliable performance in various circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5689 by Onsemi is a varactor diode with 33pF nominal capacitance, abrupt variable capacitance classification, and 40V reverse test voltage. It is used in RF applications for frequency tuning due to its high quality factor and low reverse current of 0.00000002uA.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The Onsemi MV2111 is a single varactor diode with a nominal capacitance of 47pF and min breakdown voltage of 30V. It operates at temperatures up to 150 °C, making it suitable for RF tuning applications in various electronic devices. With a quality factor of 150, this through-hole diode offers precise variable capacitance control.

MV2101G by Onsemi is a varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode's abrupt variable capacitance classification and through-hole terminal form offer precise control over capacitance ratios in electronic designs.