Toshiba - 2SC5095-R(TE85L,F)

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2SC5095-R(TE85L,F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SC5095-R(TE85L,F)
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .015 A;
Datasheet 2SC5095-R(TE85L,F) Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 10000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .015 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 50
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .1 W
Maximum Collector-Emitter Voltage: 10 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOW NOISE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 125 Cel
Maximum Collector-Base Capacitance: .85 pF
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