Toshiba - 2SK1739

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2SK1739 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SK1739
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Maximum Power Dissipation Ambient: 250 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
Datasheet 2SK1739 Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 11 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Power Dissipation Ambient: 250 W
Maximum Drain-Source On Resistance: 1.5 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 80 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 11 A
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