Toshiba - 2SK2013-Y

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2SK2013-Y by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SK2013-Y
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3; Case Connection: ISOLATED;
Datasheet 2SK2013-Y Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 1 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Minimum DS Breakdown Voltage: 180 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
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