Toshiba - 2SK2700

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2SK2700 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SK2700
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 9 A; Minimum DS Breakdown Voltage: 900 V;
Datasheet 2SK2700 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 295 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3 A
Maximum Pulsed Drain Current (IDM): 9 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 900 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 4.3 ohm
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