Toshiba - 2SK896

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2SK896 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SK896
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .6 ohm;
Datasheet 2SK896 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 125 W
Maximum Drain-Source On Resistance: .6 ohm
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