Toshiba - GT8G103

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GT8G103 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number GT8G103
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; Maximum Collector Current (IC): 8 A; Maximum Collector-Emitter Voltage: 400 V; Maximum Gate-Emitter Voltage: 6 V;
Datasheet GT8G103 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 8 A
Maximum Power Dissipation (Abs): 1.3 W
Maximum Collector-Emitter Voltage: 400 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 6 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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