Toshiba - GT8G132

  1. Home
  2. Toshiba - GT8G132
GT8G132 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number GT8G132
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
Datasheet GT8G132 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 8 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Nominal Turn Off Time (toff): 2200 ns
No. of Terminals: 8
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 1.1 W
Maximum Collector-Emitter Voltage: 400 V
Terminal Position: DUAL
Nominal Turn On Time (ton): 1100 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 6 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FP10R12W1T4B11BOMA1 by Infineon Technologies

FP10R12W1T4B11BOMA1

Infineon Technologies

Infineon's FP10R12W1T4B11BOMA1 IGBT features 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn-off time. Ideal for power control applications due to N-channel polarity, complex configuration, and silicon transistor element material.
BSM150GB120DN2 by Eupec & Kg

BSM150GB120DN2

Eupec & Kg

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 210 A; Qualification: Not Qualified;
HGTD3N60C3S9A by Fairchild Semiconductor

HGTD3N60C3S9A

Fairchild Semiconductor

Fairchild Semiconductor's HGTD3N60C3S9A is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 6A max collector current. It has a turn-off time of 455ns, turn-on time of 15ns, and fall time of 275ns. Ideal for motor control applications due to its high power dissipation capability of 33W in a small outline package style.
AFGHL75T65SQDT by Onsemi

AFGHL75T65SQDT

Onsemi

AFGHL75T65SQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 174ns and a max power dissipation of 375W. This single configuration transistor operates b/w -55 to 175 °C, making it suitable for various industrial uses.
HGTG40N60B3 by Harris Semiconductor

HGTG40N60B3

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Package Shape: RECTANGULAR;
SKM200GB12E4 by Semikron International

SKM200GB12E4

Semikron International

SKM200GB12E4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 2.05V, IC of 313A, and toff of 597ns. Ideal for POWER CONTROL applications, it operates b/w -40 to 175°C with a VCEmax of 1200V.
FGH40N60UFTU by Onsemi

FGH40N60UFTU

Onsemi

FGH40N60UFTU by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and max collector current of 80A. It has a power dissipation of 290W, making it suitable for power control applications. With a turn-off time of 190ns and turn-on time of 110ns, it offers efficient switching performance in various industrial settings.
IXDP20N60BD1 by IXYS Corporation

IXDP20N60BD1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 32 A; Additional Features: HIGH SPEED; Nominal Turn Off Time (toff): 315 ns;
FS150R12KT3 by Infineon Technologies

FS150R12KT3

Infineon Technologies

FS150R12KT3 by Infineon Technologies is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a VCEsat of 2.15V, IC of 200A, and Pmax of 700W. Ideal for high-power applications like motor drives and inverters due to its low on/off times and high collector-emitter voltage capability.
FPF2C110BI07AS2 by Onsemi

FPF2C110BI07AS2

Onsemi

Onsemi's FPF2C110BI07AS2 is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.3V, Nominal Turn Off Time of 152ns, and Max Collector-Emitter Voltage of 650V. This COMPLEX transistor with 6 elements operates b/w -40 to 150 °C and has a Max Power Dissipation of 158W in a RECTANGULAR package style.
MIXA60W1200TED by IXYS Corporation

MIXA60W1200TED

IXYS Corporation

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 85 A; Terminal Form: UNSPECIFIED;
FF200R12KE4PHOSA1 by Infineon Technologies

FF200R12KE4PHOSA1

Infineon Technologies

FF200R12KE4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 800ns, making it ideal for POWER CONTROL applications. The transistor is UL APPROVED and operates in temperatures as low as -40°C.
IGW25N120H3FKSA1 by Infineon Technologies

IGW25N120H3FKSA1

Infineon Technologies

IGW25N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 397ns toff. Ideal for POWER CONTROL applications due to its fast ton of 61ns and high operating temp of 175°C. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
7MBR50VB120-50 by Fuji Electric

7MBR50VB120-50

Fuji Electric

Fuji Electric's 7MBR50VB120-50 IGBT features N-CHANNEL polarity, 1200V VCEsat, and 50A IC. Ideal for power control applications with a max operating temperature of 175°C.
IKW25N120T2FKSA1 by Infineon Technologies

IKW25N120T2FKSA1

Infineon Technologies

IKW25N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 504ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and SILICON transistor element material. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
IKW30N60H3 by Infineon Technologies

IKW30N60H3

Infineon Technologies

IKW30N60H3 by Infineon is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 262ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temp of 175°C in a RECTANGULAR package style.
HGTP10N120BN by Onsemi

HGTP10N120BN

Onsemi

The Onsemi HGTP10N120BN is an N-CHANNEL IGBT transistor with a max VCEsat of 4.2V and a max collector-emitter voltage of 1200V. Ideal for MOTOR CONTROL applications, it has a rise time of 15ns and can handle up to 35A collector current.
NGTB60N65FL2WG by Onsemi

NGTB60N65FL2WG

Onsemi

NGTB60N65FL2WG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 100A IC, and 595W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. The transistor has a turn-off time of 278ns and turn-on time of 168ns in a rectangular package with through-hole terminals.
FGA25N120ANTDTU by Fairchild Semiconductor

FGA25N120ANTDTU

Fairchild Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 25 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Voltage: 20 V;
IRGP4266DPBF by International Rectifier

IRGP4266DPBF

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 455 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 7.7 V; Peak Reflow Temperature (C): NOT SPECIFIED;